Diamond devices could out-perform all other semiconducting materials for grid-level power electronics, i.e. more than 100 kilowatts. The high thermal conductivity and size advantage of diamond devices could potentially lead to their performance advantage overcoming higher cost compared to other wide bandgap semiconductors, like silicon-carbide and gallium nitride. The research team will explore the optical excitation and reaction in diamond as a function of phosphorous and/or nitrogen doping. This will help identify the potential and the challenges of building a photoconductive switch in the diamond platform.
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